EpiGaN raises capital for GaN-on-Si production

Hasselt, Belgium: 5 July 2011 - EpiGaN is pleased to announce that it has closed its first capital round of € 4 million, which will allow it to start volume production of GaN-on-Si epitaxial material for the nextgeneration efficient power electronics.

Incorporated in 2010, EpiGaN was founded by Dr Marianne Germain, CEO, Dr Joff Derluyn, CTO and Dr Stefan Degroote, COO, as a spin-off of imec. For more than 10 years, the founders jointly developed state-of-the-art GaN-on-Si technology on 4" and 6" wafers at imec, part of which has been licensed to EpiGaN. They are today joined by a strong consortium of investors who share their vision on GaN-on-Si as a key technology for enhancing power management efficiency, implementing renewable energy sources, or enabling cleaner transportation technologies with reduced environmental impact.

More info on the press release or on EpiGaN's website.